HM Sic GaN MOSFET MOS
HM Sic GaN MOSFET MOS
- HM
- CINA
- 1 MINGGU
- 1000000
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Sic (silikon karbida) MOS
| N Saluran Sic MOS | VDS (Maks) | VGS | VTH | PENGENAL (Maks) | IDM (Maks) | RDS (pada) (Maks) | Ciss | Ciss | Ciss | Tj | Rθjc | Rθja | Kemasan |
| HMM18N120T | 1200V | -10V/ +25V | 2.4V | 18A | 40A | 160 mhm | 890pF | 54 pF | 8,5 pF | -55- 150°C | 0,9 ℃ / W | 40 ℃ / W | KE-247-3L |
| Saluran N GaN MOS | VDS (Maks) | VTH | PENGENAL (Maks) | RDS (pada) (Maks) | Qg | Qrr | Ciss | Cos | Crs | Tj | Rθjc | Rθja | Kemasan |
| HMN8N65D | 650V | 1.65V | 8A | 220 moham | 18nC | 50nC | 1150pF | 25pF | 1pF | -55- 150°C | 4,5 ℃ / W | 50 ℃ / W | DFN8*8-2L |
| HMN20N65 | 650V | 1.65V | 20A | 120 moham | 20nC | 46 M | 1250pF | 48 pF | 2pF | -55- 150°C | 1,28 ℃ / W | 50 ℃ / W | KE-220 |
| HMN20N65D | 650V | 1.65V | 20A | 125 moham | 20nC | 56nC | 1050pF | 56pF | 2pF | -55- 150°C | 1,8 ℃ / W | 50 ℃ / W | DFN8*8-2L |
